Infrared Photodetectors Grown by Rapid Thermal Cvd
نویسنده
چکیده
GeSii infrared detectors grown by Rapid Thermal CVD are demonstrated. External quantum efficiency of7% at A=1.32jtm and eye-diagram at 1.5Gbit/s are obtained for Ge2Si71 waveguide pin detectors. It is shown that external quantum efficiency is limited by the fiber to waveguide coupling efficiency. These, along with system considerations suggest that with further improvements, such devices can be used in Si-based monolithic optoelectrothc receivers.
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